6
RF Device Data
Freescale Semiconductor
MRF6V4300NR1 MRF6V4300NBR1
TYPICAL CHARACTERISTICS
Figure 10. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
VDD
=20V
25 V
400
16
23
0 20050
100 150
18
17
21
20
22
IDQ
= 900 mA
f = 450 MHz
35 V
40 V
19
250 300 350
45 V
40
35
60
15
25_C
TC
=--30_C
85_C
20 3025
50
45
40
Pin, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
P
out
, OUTPUT POWER (dBm)
VDD
=50Vdc
IDQ
= 900 mA
f = 450 MHz
55
18
25
10
10
80
24
22
20
70
60
50
40
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
23
21
19
100 500
25_C
TC
=--30_C
85_C
85_C
Gps
VDD
=50Vdc
IDQ
= 900 mA
f = 450 MHz
25_C
-- 3 0_C
30 V
50 V
35
250
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=50Vdc,Pout
= 300 W, and
ηD
= 60%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
108
107
105
110 130 150 170 190
MTTF (HOURS)
210 230
106
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